MMBD2838
?2002 Fairchild Semiconductor Corporation
MMBD2838, Rev. A
MMBD2838
Small Signal Diode
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3
1
2
SOT-23
1
2
3
A6.
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage 75 V
IF(AV)
Average Rectified Forward Current 200 mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
Tstg
Storage Temperature Range -55 to +150
°C
TJ
Operating Junction Temperature -55 to +150
°C
Thermal Characteristics
Electrical Characteristics
TA
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation 350 mW
RθJA
Thermal Resistance, Junction to Ambient 357
°C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 100 μA
75
V
VF
Forward Voltage I
F = 50 mA
IF = 100 mA
1.0
1.2
V
V
IR
Reverse Current
VR = 50 V 100
nA
CT
Total Capacitance
VR = 0, f = 1.0 MHz
4.0 pF
trr
Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 ?
4.0 ns
Connection Diagram
12
3
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